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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6246 2N6247 2N6248 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER 2N6246 2N6247 2N6248 VCBO Collector-base voltage VCEO Collector-emitter voltage INC ANG H SEM Open emitter CON I CONDITIONS TOR DUC VALUE -70 -90 -110 -60 -80 -100 UNIT V 2N6246 2N6247 2N6248 Open base V VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Open collector -5 -15 -5 V A A W ae ae TC=25ae 125 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.4 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6246 VCEO(SUS) Collector-emitter sustaining voltage 2N6247 2N6248 2N6246 VCEsat-1 Collector-emitter saturation voltage 2N6247 2N6248 2N6246 VCEsat-2 Collector-emitter saturation voltage 2N6247 2N6248 IC=-7A; IB=-0.7A IC=-6A; IB=-0.6A IC=-5A; IB=-0.5A IC=-15A; IB=-3A IC=-15A; IB=-4A IC=-0.2A ;IB=0 CONDITIONS SYMBOL 2N6246 2N6247 2N6248 MIN -60 -80 -100 TYP. MAX UNIT V -1.3 V -2.5 V -3.5 IC=-10A; IB=-2A IC=-7A ; VCE=-4V IC=-6A ; VCE=-4V IC=-5A ; VCE=-4V VCE=1/2Rated VCEO; IB=0 -2.0 VBE Base-emitter on voltage ICEO Collector cut-off current 2N6247 2N6248 2N6246 2N6247 2N6248 2N6246 ICEX Collector cut-off current CHA IN SEM NG VEB=-5V; IC=0 VCE=-65V; VBE=-1.5V VCE=-55V; VBE=-1.5V TC=150ae VCE=-85V; VBE=-1.5V VCE=-70V; VBE=-1.5V TC=150ae VCE=-100V; VBE=-1.5V VCE=-90V; VBE=-1.5V TC=150ae CON I TOR DUC -1.8 -1.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -5.0 -1.8 V mA mA 2N6246 2N6247 2N6248 2N6246 IC=-7A ; VCE=-4V IC=-6A ; VCE=-4V IC=-5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-15A ; VCE=-4V IC=-10A ; VCE=-4V 5 20 IEBO Emitter cut-off current mA -1.0 hFE-1 DC current gain 2N6247 2N6248 2N6246 100 hFE-2 DC current gain 2N6247 2N6248 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6246 2N6247 2N6248 NG S HA INC CON EMI TOR DUC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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